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UV electroluminescence emissions from high-quality ZnO/ZnMgO multiple quantum well active layer light-emitting diodes.

ABSTRACT: 5-period ZnO/Zn0.9Mg0.1O multiple quantum wells (MQWs) were employed as active layers to fabricate the p-GaN/MQWs/n-ZnO diode by molecular beam epitaxy. It exhibited an efficient UV emission around 370 nm at room temperature. Calculated band structures and carrier distributions showed that electrons were restricted to overflow to the p-type layer, and carriers were confined in the high-quality MQWs well layer.

SUBMITTER: Chen S 

PROVIDER: S-EPMC9044243 | biostudies-literature | 2021 Dec

REPOSITORIES: biostudies-literature

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UV electroluminescence emissions from high-quality ZnO/ZnMgO multiple quantum well active layer light-emitting diodes.

Chen Shanshan S   Zhan Tengrun T   Pan Xinhua X   He Haiping H   Huang Jingyun J   Lu Bin B   Ye Zhizhen Z  

RSC advances 20211206 62

5-period ZnO/Zn<sub>0.9</sub>Mg<sub>0.1</sub>O multiple quantum wells (MQWs) were employed as active layers to fabricate the p-GaN/MQWs/n-ZnO diode by molecular beam epitaxy. It exhibited an efficient UV emission around 370 nm at room temperature. Calculated band structures and carrier distributions showed that electrons were restricted to overflow to the p-type layer, and carriers were confined in the high-quality MQWs well layer. ...[more]

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