Marked Efficiency Improvement of FAPb_0.7Sn_0.3Br₃ Perovskite Light-Emitting Diodes by Optimization of the Light-Emitting Layer and Hole-Transport Layer.

ABSTRACT: Highly luminescent FAPb_0.7Sn_0.3Br₃ nanocrystals with an average photoluminescence (PL) quantum yield of 92% were synthesized by the ligand-assisted reprecipitation method. The 41-nm-thick perovskite film with a smooth surface and strong PL intensity was proven to be a suitable luminescent layer for perovskite light-emitting diodes (PeLEDs). Electrical tests indicate that the double hole-transport layers (HTLs) played an important role in improving the electrical-to-optical conversion efficiency of PeLEDs due to their cascade-like level alignment. The PeLED based on poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,40-(N-(p-butylphenyl))-diphenylamine)] (TFB)/poly(9-vinylcarbazole) (PVK) double HTLs produced a high external quantum efficiency (EQE) of 9%, which was

SUBMITTER: Hu L 

PROVIDER: S-EPMC9102924 | biostudies-literature | 2022 Apr

REPOSITORIES: biostudies-literature