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Solution-based synthesis of wafer-scale epitaxial BiVO₄ thin films exhibiting high structural and optoelectronic quality.

ABSTRACT: We demonstrate a facile approach to solution-based synthesis of wafer-scale epitaxial bismuth vanadate (BiVO₄) thin films by spin-coating on yttria-stabilized zirconia. Epitaxial growth proceeds via solid-state transformation of initially formed polycrystalline films, driven by interface energy minimization. The (010)-oriented BiVO₄ films are smooth and compact, possessing remarkably high structural quality across complete 2'' wafers. Optical absorption is characterized by a sharp onset with a low sub-band gap response, confirming that the structural order of the films results in correspondingly high optoelectronic quality. This combination of structural and optoelectronic quality enables measurements that reveal a strong optical anisotropy of BiVO₄,

SUBMITTER: Kunzelmann VF

PROVIDER: S-EPMC9172877 | biostudies-literature | 2022 Jun

REPOSITORIES: biostudies-literature

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Solution-based synthesis of wafer-scale epitaxial BiVO₄ thin films exhibiting high structural and optoelectronic quality.

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Solution-based synthesis of wafer-scale epitaxial BiVO4 thin films exhibiting high structural and optoelectronic quality.

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Solution-based synthesis of wafer-scale epitaxial BiVO₄ thin films exhibiting high structural and optoelectronic quality.