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Reset First Resistive Switching in Ni_1-xO Thin Films as Charge Transfer Insulator Deposited by Reactive RF Magnetron Sputtering.

ABSTRACT: Reset-first resistive random access memory (RRAM) devices were demonstrated for off-stoichiometric Ni_1-xO thin films deposited using reactive sputtering with a high oxygen partial pressure. The Ni_1-xO based RRAM devices exhibited both unipolar and bipolar resistive switching characteristics without an electroforming step. Auger electron spectroscopy showed nickel deficiency in the Ni_1-xO films, and X-ray photoemission spectroscopy showed that the Ni³⁺ valence state in the Ni_1-xO films increased with increasing oxygen partial pressure. Conductive atomic force microscopy showed that the conductivity of the Ni_1-xO films increased with increasing oxygen partial pressure during deposition, possibly contributing to the reset-first switching of the Ni_1-xO films.

SUBMITTER: Kim DW

PROVIDER: S-EPMC9268175 | biostudies-literature | 2022 Jun

REPOSITORIES: biostudies-literature

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Reset First Resistive Switching in Ni1-xO Thin Films as Charge Transfer Insulator Deposited by Reactive RF Magnetron Sputtering.

Kim Dae-Woo DW Kim Tae-Ho TH Kim Jae-Yeon JY Sohn Hyun-Chul HC

Nanomaterials (Basel, Switzerland) 20220629 13

Reset-first resistive random access memory (RRAM) devices were demonstrated for off-stoichiometric Ni1-xO thin films deposited using reactive sputtering with a high oxygen partial pressure. The Ni1-xO based RRAM devices exhibited both unipolar and bipolar resistive switching characteristics without an electroforming step. Auger electron spectroscopy showed nickel deficiency in the Ni1-xO films, and X-ray photoemission spectroscopy showed that the Ni3+ ...[more]

PMID: 35808068

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