Dataset Information

Molecular Glass Resists Based on Tetraphenylsilane Derivatives: Effect of Protecting Ratios on Advanced Lithography.

ABSTRACT: A series of t-butyloxycarbonyl (t-Boc) protected tetraphenylsilane derivatives (TPSi-Boc _x , x = 60, 70, 85, 100%) were synthesized and used as resist materials to investigate the effect of t-Boc protecting ratio on advanced lithography. The physical properties such as solubility, film-forming ability, and thermal stability of TPSi-Boc _x were examined to assess the suitability for application as candidates for positive-tone molecular glass resist materials. The effects of t-Boc protecting ratio had been studied in detail by electron beam lithography. The results suggest that the TPSi-Boc _x resist with different t-Boc protecting ratios exhibit a significant change in contrast, pattern blur, and the density of bridge defect. The TPSi-Boc_70% resist achieves the most excellent patterning capability. The extreme ultraviolet (EUV) lithography performance on TPSi-Boc_70% was evaluated by using the soft X-ray interference lithography. The results demonstrate that the TPSi-Boc_70% resist can achieve excellent patterning capability down to 20 nm isolated lines at 8.7 mJ/cm² and 25 nm dense lines at 14.5 mJ/cm². This study will help us to understand the relationship between the t-Boc protecting ratio and the patterning ability and supply useful guidelines for designing molecular resists.

SUBMITTER: Wang Y

PROVIDER: S-EPMC9404489 | biostudies-literature | 2022 Aug

REPOSITORIES: biostudies-literature

ACCESS DATA

Publications

Molecular Glass Resists Based on Tetraphenylsilane Derivatives: Effect of Protecting Ratios on Advanced Lithography.

Wang Yake Y Chen Jinping J Zeng Yi Y Yu Tianjun T Guo Xudong X Wang Shuangqing S Allenet Timothée T Vockenhuber Michaela M Ekinci Yasin Y Zhao Jun J Yang Shumin S Wu Yanqing Y Yang Guoqiang G Li Yi Y

ACS omega 20220812 33

A series of t-butyloxycarbonyl (t-Boc) protected tetraphenylsilane derivatives (TPSi-Boc x , x = 60, 70, 85, 100%) were synthesized and used as resist materials to investigate the effect of t-Boc protecting ratio on advanced lithography. The physical properties such as solubility, film-forming ability, and thermal stability of TPSi-Boc x were examined to assess the suitability for application as candidates for positive-tone molecula ...[more]

PMID: 36033723

Similar Datasets

Project description:Resists that enable high-throughput and high-resolution patterning are essential in driving the semiconductor technology forward. The ultimate patterning performance of a resist in lithography is limited because of the trade-off between resolution, line-width roughness, and sensitivity; improving one or two of these parameters typically leads to a loss in the third. As the patterned feature sizes approach angstrom scale, the trade-off between these three metrics becomes increasingly hard to resolve and calls for a fundamental rethinking of the resist chemistry. Low-molecular-mass monodispersed metal-containing resists of high atom economy can provide not only very high resolution but also very low line-width roughness without sacrificing sensitivity. Here we describe a modular metal-containing resist platform (molecular mass <500 Da) where a molecular resist consists of just two components: a metal and a radical initiator bonded to it. This simple system not only is amenable to high-resolution electron beam lithography (EBL) and extreme ultraviolet lithography (EUVL) but also unites them mechanistically, giving a consolidated perspective of molecular and chemical processes happening during exposure. Irradiation of the resist leads to the production of secondary electrons that generate radicals in the initiator bonded to metal. This brings about an intramolecular rearrangement and causes solubility switch in the exposed resist. We demonstrate record 1.9-2.0 nm isolated patterns and 7 nm half-pitch dense line-space features over a large area using EBL. With EUVL, 12 nm half-pitch line-space features are shown at a dose of 68 mJ/cm2. In both of these patterning techniques, the line-width roughness was found to be ≤2 nm, a record low value for any resist platform, also leading to a low-performance trade-off metric, Z factor, of 0.6 × 10-8 mJ·nm3. With the ultimate resolution limited by instrumental factors, potential patterning at the level of a unit cell can be envisaged, making low-molecular-mass resists best poised for angstrom-scale lithography.

Dataset Information

Molecular Glass Resists Based on Tetraphenylsilane Derivatives: Effect of Protecting Ratios on Advanced Lithography.

Publications

Molecular Glass Resists Based on Tetraphenylsilane Derivatives: Effect of Protecting Ratios on Advanced Lithography.

Similar Datasets

OmicsDI is part of the ELIXIR infrastructure

Tweets