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Oxygen scavenging of HfZrO2-based capacitors for improving ferroelectric properties† † Electronic supplementary information (ESI) available. See https://doi.org/10.1039/d2na00533f

ABSTRACT: HfO2-based ferroelectric (FE) materials have emerged as a promising material for non-volatile memory applications because of remanent polarization, scalability of thickness below 10 nm, and compatibility with complementary metal–oxide–semiconductor technology. However, in the metal/FE/insulator/semiconductor, it is difficult to improve switching voltage (Vsw), endurance, and retention properties due to the interfacial layer (IL), which inevitably grows during the fabrication. Here, we proposed and demonstrated oxygen scavenging to reduce the IL thickness in an HfZrOx-based capacitor and the thinner IL was confirmed by cross-sectional transmission electron microscopy. Vsw of a capacitor with scavenging decreased by 18% and the same Pr could be obtained at a lower voltage than a capacitor without scavenging. In addition, excellent endurance properties up to 106 cycles were achieved. We believe oxygen scavenging has great potential for future HfZrOx-based memory device applications. We demonstrate the successful remote oxygen scavenging of HZO-based capacitors, highlighting the significant enhancement of remanent polarization, switching voltage, endurance, and retention.

SUBMITTER: Kim B

PROVIDER: S-EPMC9514567 | biostudies-literature | 2022 Aug

REPOSITORIES: biostudies-literature

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