Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth.

ABSTRACT: As a wide bandgap semiconductor material, silicon carbide has promising prospects for application. However, its commercial production size is currently 6 inches, and the difficulty in preparing larger single crystals increases exponentially with size increasing. Large-size single crystal growth is faced with the enormous problem of radial growth conditions deteriorating. Based on simulation tools, the physical field of 8-inch crystal growth is modeled and studied. By introducing the design of the seed cavity, the radial temperature difference in the seed crystal surface is reduced by 88% from 93 K of a basic scheme to 11 K, and the thermal field conditions with uniform radial temperature and moderate temperature gradient are obtained. Meanwhile, the effects of different processing conditio

SUBMITTER: Zhang S 

PROVIDER: S-EPMC9867089 | biostudies-literature | 2023 Jan

REPOSITORIES: biostudies-literature