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Etch and Print: Graphene-Based Diodes for Silicon Technology.

ABSTRACT: The graphene-silicon junction is one of the simplest conceivable interfaces in graphene-integrated semiconductor technology that can lead to the development of future generation of electronic and optoelectronic devices. However, graphene's integration is currently expensive and time-consuming and shows several challenges in terms of large-scale device fabrication, effectively preventing the possibility of implementing this technology into industrial processes. Here, we show a simple and cost-effective fabrication technique, based on inkjet printing, for the realization of printed graphene-silicon rectifying devices. The printed graphene-silicon diodes show an ON/OFF ratio higher than 3 orders of magnitude and a significant photovoltaic effect, resulting in a fill factor of ∼40% and a photocurrent efficiency of ∼2%, making the devices suitable for both electronic and optoelectronic applications. Finally, we demonstrate large-area pixeled photodetectors and compatibility with back-end-of-line fabrication processes.

SUBMITTER: Grillo A

PROVIDER: S-EPMC9878974 | biostudies-literature | 2022 Dec

REPOSITORIES: biostudies-literature

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Etch and Print: Graphene-Based Diodes for Silicon Technology.

Grillo Alessandro A Peng Zixing Z Pelella Aniello A Di Bartolomeo Antonio A Casiraghi Cinzia C

ACS nano 20221207

The graphene-silicon junction is one of the simplest conceivable interfaces in graphene-integrated semiconductor technology that can lead to the development of future generation of electronic and optoelectronic devices. However, graphene's integration is currently expensive and time-consuming and shows several challenges in terms of large-scale device fabrication, effectively preventing the possibility of implementing this technology into industrial processes. Here, we show a simple and cost-eff ...[more]

PMID: 36475589

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