Sub-10 fJ/bit radiation-hard nanoelectromechanical non-volatile memory.

ABSTRACT: With the exponential growth of the semiconductor industry, radiation-hardness has become an indispensable property of memory devices. However, implementation of radiation-hardened semiconductor memory devices inevitably requires various radiation-hardening technologies from the layout level to the system level, and such technologies incur a significant energy overhead. Thus, there is a growing demand for emerging memory devices that are energy-efficient and intrinsically radiation-hard. Here, we report a nanoelectromechanical non-volatile memory (NEM-NVM) with an ultra-low energy consumption and radiation-hardness. To achieve an ultra-low operating energy of less than 10 [Formula: see text], we introduce an out-of-plane electrode configuration and electrothermal erase operation. These appr

SUBMITTER: Lee YB 

PROVIDER: S-EPMC9884203 | biostudies-literature | 2023 Jan

REPOSITORIES: biostudies-literature