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MoS2 has been reported to exhibit a resistive switching phenomenon in a vertical metal-insulator-metal (MIM) structure and has attracted much attention due to its ultra-thin active layer thickness. Here, the resistance evolutions in the high resistance state (HRS) and low resistance state...
Electrostatic gating of two-dimensional (2D) materials with ionic liquids (ILs), leading to the accumulation of high surface charge carrier densities, has been often exploited in 2D devices. However, the intrinsic liquid nature of ILs, their sensitivity to humidity, and the stress induced in frozen ...
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