Ion-Induced Lateral Damage in the Focused Ion Beam Patterning of Topological Insulator Bi₂Se₃ Thin Films.

ABSTRACT: Focused Ion Beam patterning has become a widely applied technique in the last few decades in the micro- and nanofabrication of quantum materials, representing an important advantage in terms of resolution and versatility. However, ion irradiation can trigger undesired effects on the target material, most of them related to the damage created by the impinging ions that can severely affect the crystallinity of the sample, compromising the application of Focused Ion Beam to the fabrication of micro- and nanosized systems. We focus here on the case of Bi₂Se₃, a topological material whose unique properties rely on its crystallinity. In order to study the effects of ion irradiation on the structure of Bi₂Se₃, we irradiated with Ga⁺ ions the

SUBMITTER: Gracia-Abad R 

PROVIDER: S-EPMC10051711 | biostudies-literature | 2023 Mar

REPOSITORIES: biostudies-literature