Dataset Information

Superflexible Inorganic Ag₂ Te_0.6 S_0.4 Fiber with High Thermoelectric Performance.

ABSTRACT: Fiber-based inorganic thermoelectric (TE) devices, owing to the small size, light-weight, flexibility, and high TE performance, are promising for applications in flexible thermoelectrics. Unfortunately, current inorganic TE fibers are strictly constrained by limited mechanical freedom because of the undesirable tensile strain, typically limited to a value of 1.5%, posing a strong obstacle for further application in large-scale wearable systems. Here, a superflexible Ag₂ Te_0.6 S_0.4 inorganic TE fiber is demonstrated that provides a record tensile strain of 21.2%, such that it enables various complex deformations. Importantly, the TE performance of the fiber shows high stability after ≈1000 cycles of bending and releasing processes with a small bending radius of 5 mm. This allows for the integration of the inorganic TE fiber into 3D wearable fabric, yielding a normalized power density of 0.4 µW m^-1 K^-2 under the temperature difference of 20 K, which is approaching the high-performance Bi₂ Te₃ -based inorganic TE fabric and is nearly two orders of magnitude higher than the organic TE fabrics. These results highlight that the inorganic TE fiber with both superior shape-conformable ability and high TE performance may find potential applications in wearable electronics.

SUBMITTER: Fu Y

PROVIDER: S-EPMC10161083 | biostudies-literature | 2023 May

REPOSITORIES: biostudies-literature

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Superflexible Inorganic Ag2 Te0.6 S0.4 Fiber with High Thermoelectric Performance.

Fu Yanqing Y Kang Shiliang S Gu Hao H Tan Linling L Gao Chengwei C Fang Zaijin Z Dai Shixun S Lin Changgui C

Advanced science (Weinheim, Baden-Wurttemberg, Germany) 20230308 13

Fiber-based inorganic thermoelectric (TE) devices, owing to the small size, light-weight, flexibility, and high TE performance, are promising for applications in flexible thermoelectrics. Unfortunately, current inorganic TE fibers are strictly constrained by limited mechanical freedom because of the undesirable tensile strain, typically limited to a value of 1.5%, posing a strong obstacle for further application in large-scale wearable systems. Here, a superflexible Ag2 Te0.6</su ...[more]

PMID: 36890652

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Project description:The exploration initiated by the discovery of the topological insulator (BixSb1-x)2Te3 has extended to unlock the potential of quantum anomalous Hall effects (QAHEs), marking a revolutionary era for topological quantum devices, low-power electronics, and spintronic applications. In this study, we present the epitaxial growth of Cr-doped (Bi0.4Sb0.6)2Te3 (Cr:BST) thin films via molecular beam epitaxy, incorporating various Cr doping concentrations with varying Cr/Sb ratios (0.025, 0.05, 0.075, and 0.1). High-quality crystalline of the Cr:BST thin films deposited on a c-plane sapphire substrate has been rigorously confirmed through reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), and high-resolution transmission electron microscopy (HRTEM) analyses. The existence of a Cr dopant has been identified with a reduction in the lattice parameter of BST from 30.53 ± 0.05 to 30.06 ± 0.04 Å confirmed by X-ray diffraction, and the valence state of Cr verified by X-ray photoemission (XPS) at binding energies of ~573.1 and ~583.5 eV. Additionally, the influence of Cr doping on lattice vibration was qualitatively examined by Raman spectroscopy, revealing a blue shift in peaks with increased Cr concentration. Surface characteristics, crucial for the functionality of topological insulators, were explored via Atomic Force Microscopy (AFM), illustrating a sevenfold reduction in surface roughness as the Cr concentration increased from 0 to 0.1. The ferromagnetic properties of Cr:BST were examined by a superconducting quantum interference device (SQUID) with a magnetic field applied in out-of-plane and in-plane directions. The Cr:BST samples exhibited a Curie temperature (Tc) above 50 K, accompanied by increased magnetization and coercivity with increasing Cr doping levels. The introduction of the Cr dopant induces a transition from n-type ((Bi0.4Sb0.6)2Te3) to p-type (Cr:(Bi0.4Sb0.6)2Te3) carriers, demonstrating a remarkable suppression of carrier density up to one order of magnitude, concurrently enhancing carrier mobility up to a factor of 5. This pivotal outcome is poised to significantly influence the development of QAHE studies and spintronic applications.

Dataset Information

Superflexible Inorganic Ag₂ Te_0.6 S_0.4 Fiber with High Thermoelectric Performance.

Publications

Superflexible Inorganic Ag<sub>2</sub> Te<sub>0.6</sub> S<sub>0.4</sub> Fiber with High Thermoelectric Performance.

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