Gallium Nitride Based Electrode for High-Temperature Supercapacitors.

ABSTRACT: Gallium nitride (GaN) single crystal, as the representative of wide-band semiconductors, has great prospects for high-temperature energy storage, of its splendid power output, robust temperature stability, and superior carrier mobility. Nonetheless, it is an essential challenge for GaN-based devices to improve energy storage. Herein, an innovative strategy is proposed by constructing GaN/Nickel cobalt oxygen (NiCoO₂  ）heterostructure for enhanced supercapacitors (SCs). Benefiting from the synergy effect between the porous GaN network as a highly conductive skeleton and the NiCoO₂ with massive active sites. The GaN/NiCoO₂ heterostructure-based SCs with ion liquids electrolyte are assembled and delivered an impressive energy density of 15.2 µWh cm^-2

SUBMITTER: Lv S 

PROVIDER: S-EPMC10214239 | biostudies-literature | 2023 May

REPOSITORIES: biostudies-literature