Study of GaN coalescence by dark-field X-ray microscopy at the nanoscale.

ABSTRACT: This work illustrates the potential of dark-field X-ray microscopy (DFXM), a 3D imaging technique of nanostructures, in characterizing novel epitaxial structures of gallium nitride (GaN) on top of GaN/AlN/Si/SiO₂ nano-pillars for optoelectronic applications. The nano-pillars are intended to allow independent GaN nanostructures to coalesce into a highly oriented film due to the SiO₂ layer becoming soft at the GaN growth temperature. DFXM is demonstrated on different types of samples at the nanoscale and the results show that extremely well oriented lines of GaN (standard deviation of 0.04°) as well as highly oriented material for zones up to 10 × 10 µm² in area are achieved with this growth approach. At a macroscale, high-intensity X-ray diffraction is used

SUBMITTER: Wehbe M 

PROVIDER: S-EPMC10241046 | biostudies-literature | 2023 Jun

REPOSITORIES: biostudies-literature