Project description:The coupling between electric, magnetic and elastic features in multiferroic materials is an emerging field in materials science, with important applications on alternative solid-state cooling technologies, energy harvesting and sensors/actuators. In this direction, we developed a thorough investigation of a multiferroic composite, comprising magnetocaloric/magnetostrictive Gd[Formula: see text]Si[Formula: see text]Ge[Formula: see text] microparticles blended into a piezo- and pyroelectric poly(vinylidene) fluoride (PVDF) matrix. Using a simple solvent casting technique, the formation and stabilization of PVDF electroactive phases are improved when the filler content increases from 2 to 12 weight fraction (wt.%). This effect greatly contributes to the magnetoelectric (ME) coupling, with the ME coefficient [Formula: see text] increasing from 0.3 V/cm.Oe to 2.2 V/cm.Oe, by increasing the amount of magnetic material. In addition, magnetic measurements revealed that the ME-coupling has influenced the magnetocaloric effect via a contribution from the electroactive polymer and hence leading to a multicaloric effect. These results contribute to the development of multifunctional systems for novel technologies.
Project description:Tsai-type quasicrystals and approximants are distinguished by a cluster unit made up of four concentric polyhedral shells that surround a tetrahedron at the center. Here we show that for Tsai-type 1/1 approximants in the RE-Au-Si systems (RE = Gd, Tb, Ho) the central tetrahedron of the Tsai clusters can be systematically replaced by a single RE atom. The modified cluster is herein termed a "pseudo-Tsai cluster" and represents, in contrast to the conventional Tsai cluster, a structural motif without internal symmetry breaking. For each system, single-phase samples of both pseudo-Tsai and Tsai-type 1/1 approximants were independently prepared as millimeter-sized, faceted, single crystals using the self-flux synthesis method. The full replacement of tetrahedral moieties by RE atoms in the pseudo-Tsai 1/1 approximants was ascertained by a combination of single-crystal and powder diffraction studies, as well as energy dispersive X-ray spectroscopy (EDX) analyses with a scanning electron microscope (SEM). Differential scanning calorimetry (DSC) studies revealed distinctly higher decomposition temperatures, by 5-35 K, for the pseudo-Tsai phases. Furthermore, the magnetic properties of pseudo-Tsai phases are profoundly and consistently different from the Tsai counterparts. The onset temperatures of magnetic ordering (Tmag) are lowered in the pseudo-Tsai phases by ∼30% from 24 to 17 K, 11.5 to 8 K, and 5 to 3.5 K in the Gd-Au-Si, Tb-Au-Si, and Ho-Au-Si systems, respectively. In addition, the Tb-Au-Si and Ho-Au-Si systems exhibit some qualitative changes in their magnetic ordering, indicating decisive changes in the magnetic state/structure by a moment-bearing atom at the cluster center.
Project description:The title compound, dicerium(III) oxidodisilicate, Ce2[Si2O7], was obtained as a by-product in its H-type structure after attempts to synthesize CeSb2O4Cl from fused silica ampoules. It crystallizes isotypically with H-La2[Si2O7]. The four crystallographically distinct CeIII cations form distorted square anti-prisms, capped square anti-prisms, and bicapped square anti-prisms as coordination polyhedra consisting of oxygen atoms. Four crystallographically different silicon atoms recruit the centers of two different isolated [Si2O7]6- units.
Project description:Magnetic properties of the azafullerene Gd2@C79N are studied by SQUID magnetometry. The effective exchange coupling constant jGd,e between the Gd spins and the spin of unpaired electron residing on the single-electron Gd-Gd bond is determined to be 170 ± 10 cm-1. Low temperature AC measurements revealed field-induced millisecond-long relaxation of magnetization.
Project description:One of the limiting factors of graphene integration into electronic, photonic, or sensing devices is the unavailability of large-scale graphene directly grown on the isolators. Therefore, it is necessary to transfer graphene from the donor growth wafers onto the isolating target wafers. In the present research, graphene was transferred from the chemical vapor deposited 200 mm Germanium/Silicon (Ge/Si) wafers onto isolating (SiO2/Si and Si3N4/Si) wafers by electrochemical delamination procedure, employing poly(methylmethacrylate) as an intermediate support layer. In order to influence the adhesion properties of graphene, the wettability properties of the target substrates were investigated in this study. To increase the adhesion of the graphene on the isolating surfaces, they were pre-treated with oxygen plasma prior the transfer process of graphene. The wetting contact angle measurements revealed the increase of the hydrophilicity after surface interaction with oxygen plasma, leading to improved adhesion of the graphene on 200 mm target wafers and possible proof-of-concept development of graphene-based devices in standard Si technologies.
Project description:The massively parallel arrays of highly periodic Gd-doped Si nanowires (SiNWs) self-organized on Si(110)-16 × 2 surface were investigated by scanning tunneling microscopy and spectroscopy. These periodic Gd-doped SiNWs are atomically precise and show equal size, periodic positions, and high-integration densities. Surprisingly, the scanning tunneling spectroscopy results show that each metallic-like, Gd-doped SiNW exhibits room-temperature negative differential resistance (RT-NDR) behavior, which can be reproducible with various Gd dopings and is independent of the tips. Such massively parallel arrays of highly ordered and atomically identical Gd-doped SiNWs with one-dimensional laterally confined RT-NDR can be exploited in Si-based RT-NDR nanodevices.
Project description:Impurity doping of ultrasmall nanoscale (usn) silicon (Si) currently used in ultralarge scale integration (ULSI) faces serious miniaturization challenges below the 14 nm technology node such as dopant out-diffusion and inactivation by clustering in Si-based field-effect transistors (FETs). Moreover, self-purification and massively increased ionization energy cause doping to fail for Si nano-crystals (NCs) showing quantum confinement. To introduce electron- (n-) or hole- (p-) type conductivity, usn-Si may not require doping, but an energy shift of electronic states with respect to the vacuum energy between different regions of usn-Si. We show in theory and experiment that usn-Si can experience a considerable energy offset of electronic states by embedding it in silicon dioxide (SiO2) or silicon nitride (Si3N4), whereby a few monolayers (MLs) of SiO2 or Si3N4 are enough to achieve these offsets. Our findings present an alternative to conventional impurity doping for ULSI, provide new opportunities for ultralow power electronics and open a whole new vista on the introduction of p- and n-type conductivity into usn-Si.
Project description:Memristors are promising building blocks for the next-generation memory and neuromorphic computing systems. Most memristors use materials that are incompatible with the silicon dominant complementary metal-oxide-semiconductor technology, and require external selectors in order for large memristor arrays to function properly. Here we demonstrate a fully foundry-compatible, all-silicon-based and self-rectifying memristor that negates the need for external selectors in large arrays. With a p-Si/SiO2/n-Si structure, our memristor exhibits repeatable unipolar resistance switching behaviour (105 rectifying ratio, 104 ON/OFF) and excellent retention at 300 °C. We further build three-dimensinal crossbar arrays (up to five layers of 100 nm memristors) using fluid-supported silicon membranes, and experimentally confirm the successful suppression of both intra- and inter-layer sneak path currents through the built-in diodes. The current work opens up opportunities for low-cost mass production of three-dimensional memristor arrays on large silicon and flexible substrates without increasing circuit complexity.
Project description:Single crystals of a novel sodium-magnesium boride silicide, Na3MgB37Si9 [a = 10.1630 (3) Å, c = 16.5742 (6) Å, space group R m (No. 166)], were synthesized by heating a mixture of Na, Si and crystalline B with B2O3 flux in Mg vapor at 1373 K. The Mg atoms in the title compound are located at an inter-stitial site of the Dy2.1B37Si9-type structure with an occupancy of 0.5. The (001) layers of B12 icosa-hedra stack along the c-axis direction with shifting in the [-a/3, b/3, c/3] direction. A three-dimensional framework structure of the layers is formed via B-Si bonds and {Si8} units of [Si]3-Si-Si-[Si]3.
Project description:The crystal structures of dirubidium potassium dysprosium bis-(vanadate), Rb2KDy(VO4)2, and caesium potassium gadolinium bis-(vanadate), Cs1.52K1.48Gd(VO4)2, were solved from single-crystal X-ray diffraction data. Both compounds, synthesized by the reactive flux method, crystallize in the space group P m1 with the glaserite structure type. VO4 tetra-hedra are linked to DyO6 or GdO6 octa-hedra by common vertices to form sheets stacking along the c axis. The large twelve-coordinate Cs+ or Rb+ cations are sandwiched between these layers in tunnels along the a and b axes, while the K+ cations, surrounded by ten oxygen atoms, are localized in cavities.