Simultaneously ultrafast and robust two-dimensional flash memory devices based on phase-engineered edge contacts.

ABSTRACT: As the prevailing non-volatile memory (NVM), flash memory offers mass data storage at high integration density and low cost. However, due to the 'speed-retention-endurance' dilemma, their typical speed is limited to ~microseconds to milliseconds for program and erase operations, restricting their application in scenarios with high-speed data throughput. Here, by adopting metallic 1T-Li_xMoS₂ as edge contact, we show that ultrafast (10-100 ns) and robust (endurance>10⁶ cycles, retention>10 years) memory operation can be simultaneously achieved in a two-dimensional van der Waals heterostructure flash memory with 2H-MoS₂ as semiconductor channel. We attribute the superior performance to the gate tunable Schottky barrier at the edge contact, which can

SUBMITTER: Yu J 

PROVIDER: S-EPMC10499832 | biostudies-literature | 2023 Sep

REPOSITORIES: biostudies-literature