Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor.

ABSTRACT: In this work, we present the development of an atomic layer deposition (ALD) process for metallic cobalt. The process operates at low temperatures using dicobalt hexacarbonyl-1-heptyne [Co₂(CO)₆HC≡CC₅H₁₁] and hydrogen plasma. For this precursor an ALD window in the temperature range between 50 and 110 °C was determined with a constant deposition rate of approximately 0.1 Å/cycle. The upper limit of the ALD window is defined by the onset of the decomposition of the precursor. In our case, decomposition occurs at temperatures of 125 °C and above, resulting in a film growth in chemical vapour deposition mode. The lower limit of the ALD window is around 35 °C, where the reduction of the precursor is incomplete. The saturation behaviour of the process

SUBMITTER: Franz M 

PROVIDER: S-EPMC10509559 | biostudies-literature | 2023

REPOSITORIES: biostudies-literature