High-performance van der Waals antiferroelectric CuCrP₂S₆-based memristors.

ABSTRACT: Layered thio- and seleno-phosphate ferroelectrics, such as CuInP₂S₆, are promising building blocks for next-generation nonvolatile memory devices. However, because of the low Curie point, the CuInP₂S₆-based memory devices suffer from poor thermal stability (<42 °C). Here, exploiting the electric field-driven phase transition in the rarely studied antiferroelectric CuCrP₂S₆ crystals, we develop a nonvolatile memristor showing a sizable resistive-switching ratio of ~ 1000, high switching endurance up to 20,000 cycles, low cycle-to-cycle variation, and robust thermal stability up to 120 °C. The resistive switching is attributed to the ferroelectric polarization-modulated thermal emission accompanied by the Fowler-Nordheim tunne

SUBMITTER: Ma Y 

PROVIDER: S-EPMC10689492 | biostudies-literature | 2023 Nov

REPOSITORIES: biostudies-literature