Flexible Quasi-van der Waals Ferroelectric Hafnium-Based Oxide for Integrated High-Performance Nonvolatile Memory.

ABSTRACT: Ferroelectric memories with ultralow-power-consumption are attracting a great deal of interest with the ever-increasing demand for information storage in wearable electronics. However, sufficient scalability, semiconducting compatibility, and robust flexibility of the ferroelectric memories remain great challenges, e.g., owing to Pb-containing materials, oxide electrode, and limited thermal stability. Here, high-performance flexible nonvolatile memories based on ferroelectric Hf_0.5Zr_0.5O₂ (HZO) via quasi-van der Waals heteroepitaxy are reported. The flexible ferroelectric HZO exhibits not only high remanent polarization up to 32.6 µC cm^-2 without a wake-up effect during cycling, but also remarkably robust mechanical properties, degradation-free r

SUBMITTER: Liu H 

PROVIDER: S-EPMC7539221 | biostudies-literature | 2020 Oct

REPOSITORIES: biostudies-literature