Ultrahigh-gain organic transistors based on van der Waals metal-barrier interlayer-semiconductor junction.

ABSTRACT: Intrinsic gain is a vital figure of merit in transistors, closely related to signal amplification, operation voltage, power consumption, and circuit simplification. However, organic thin-film transistors (OTFTs) targeted at high gain have suffered from challenges such as narrow subthreshold operating voltage, low-quality interface, and uncontrollable barrier. Here, we report a van der Waals metal-barrier interlayer-semiconductor junction-based OTFT, which shows ultrahigh performance including ultrahigh gain of ~10⁴, low saturation voltage, negligible hysteresis, and good stability. The high-quality van der Waals-contacted junctions are mainly attributed to patterning EGaIn liquid metal electrodes by low-energy microfluidic processes. The wide-bandgap semiconductor Ga₂

SUBMITTER: Wang S 

PROVIDER: S-EPMC10699771 | biostudies-literature | 2023 Dec

REPOSITORIES: biostudies-literature