Subthreshold Current Suppression in ReS₂ Nanosheet-Based Field-Effect Transistors at High Temperatures.

ABSTRACT: Two-dimensional rhenium disulfide (ReS₂), a member of the transition-metal dichalcogenide family, has received significant attention due to its potential applications in field-effect transistors (FETs), photodetectors, and memories. In this work, we investigate the suppression of the subthreshold current during the forward voltage gate sweep, leading to an inversion of the hysteresis in the transfer characteristics of ReS₂ nanosheet-based FETs from clockwise to anticlockwise. We explore the impact of temperature, sweeping gate voltage, and pressure on this behavior. Notably, the suppression in current within the subthreshold region coincides with a peak in gate current, which increases beyond a specific temperature but remains unaffected by pressure. We attribute both

SUBMITTER: Durante O 

PROVIDER: S-EPMC10714311 | biostudies-literature | 2023 Dec

REPOSITORIES: biostudies-literature