Low-Temperature Solution-Based Molybdenum Oxide Memristors.

ABSTRACT: Solution-based memristors have gained significant attention in recent years due to their potential for the low-cost, scalable, and environmentally friendly fabrication of resistive switching devices. This study is focused on the fabrication and characterization of solution-based molybdenum trioxide (MoO₃) memristors under different annealing temperatures (200 to 400 °C). A MoO₃ ink recipe is developed using water as the main solvent, enabling a simplified and cost-effective fabrication process. Material analysis reveals the presence of a Mo⁶⁺ oxidation state and an amorphous structure in the films annealed up to 250 °C. Electrical tests confirm a bipolar resistive switching behavior in the memristors according to the valence change mechanism (VCM). Enduranc

SUBMITTER: Martins RA 

PROVIDER: S-EPMC10897879 | biostudies-literature | 2024 Feb

REPOSITORIES: biostudies-literature