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A Thin-Film Cryotron Suitable For Use as an Ultra-Low-Temperature Switch.

ABSTRACT: Low-temperature superconducting circuits have become important for many scientific applications. However, there are presently no high current-capacity switches (~1 mA) with low power dissipation for sub-Kelvin operation. One candidate for a sub-Kelvin switch is the cryotron, a device in which the superconductivity of a wire is suppressed with a magnetic field. Here, we demonstrate a cryotron switch suitable for sub-Kelvin temperatures. In the closed state, the maximum device current is about 900 μA. The device is switched to its open state with 2 mA of control current and has a leakage of approximately 500 nA. The transition between the closed and open states of the device is faster than 200 ns, where the measurement is limited by the speed of our measurement apparatus. We also discuss low-temperature applications for our cryotron such as a single-pole, double-throw switch.

SUBMITTER: Lowell PJ

PROVIDER: S-EPMC10941307 | biostudies-literature | 2016

REPOSITORIES: biostudies-literature

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A Thin-Film Cryotron Suitable For Use as an Ultra-Low-Temperature Switch.

Lowell Peter J PJ Mates John A B JAB Doriese W Bertrand WB Hilton Gene C GC Morgan Kelsey M KM Swetz Daniel S DS Ullom Joel N JN Schmidt Daniel R DR

Applied physics letters 20160101 14

Low-temperature superconducting circuits have become important for many scientific applications. However, there are presently no high current-capacity switches (~1 mA) with low power dissipation for sub-Kelvin operation. One candidate for a sub-Kelvin switch is the cryotron, a device in which the superconductivity of a wire is suppressed with a magnetic field. Here, we demonstrate a cryotron switch suitable for sub-Kelvin temperatures. In the closed state, the maximum device current is about 900 ...[more]

PMID: 38495106

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Project description:Amorphous metal-oxide semiconductors (AOSs) such as indium-gallium-zinc-oxide (IGZO) as an active channel have attracted substantial interests with regard to high-performance thin-film transistors (TFTs). Recently, intensive and extensive studies of flexible and/or wearable AOS-based TFTs fabricated by solution-process have been reported for emerging approaches based on device configuration and fabrication process. However, several challenges pertaining to practical and effective solution-process technologies remain to be resolved before low-power consuming AOS-based TFTs for wearable electronics can be realized. In this paper, we investigate the non-thermal annealing processes for sol-gel based metal-oxide semiconductor and dielectric films fabricated by deep ultraviolet (DUV) photo and microwave annealing at low temperature, compared to the conventional thermal annealing at high temperature. A comprehensive investigation including a comparative analysis of the effects of DUV photo and microwave annealing on the degree of metal-oxide-metal networks in amorphous IGZO and high-dielectric-constant (high-k) aluminum oxide (Al2O3) films and device performance of IGZO-TFTs in a comparison with conventional thermal annealing at 400 °C was conducted. We also demonstrate the feasibility of wearable IGZO-TFTs with Al2O3 dielectrics on solution-processed polyimide films exhibiting a high on/off current ratio of 5 × 104 and field effect mobility up to 1.5 cm2/V-s operating at 1 V. In order to reduce the health risk and power consumption during the operation of wearable electronics, the operating voltage of IGZO-TFTs fabricated by non-thermal annealing at low temperature was set below ~1 V. The mechanical stability of wearable IGZO-TFTs fabricated by an all-solution-process except metal electrodes, against cyclic bending tests with diverse radius of curvatures in real-time was investigated. Highly stable and robust flexible IGZO-TFTs without passivation films were achieved even under continuous flexing with a curvature radius of 12 mm.

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A Thin-Film Cryotron Suitable For Use as an Ultra-Low-Temperature Switch.

Publications

A Thin-Film Cryotron Suitable For Use as an Ultra-Low-Temperature Switch.

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