High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics.

ABSTRACT: With the development of wearable devices and hafnium-based ferroelectrics (FE), there is an increasing demand for high-performance flexible ferroelectric memories. However, developing ferroelectric memories that simultaneously exhibit good flexibility and significant performance has proven challenging. Here, we developed a high-performance flexible field-effect transistor (FeFET) device with a thermal budget of less than 400 °C by integrating Zr-doped HfO₂ (HZO) and ultra-thin indium tin oxide (ITO). The proposed FeFET has a large memory window (MW) of 2.78 V, a high current on/off ratio (I_ON/I_OFF) of over 10⁸, and high endurance up to 2×10⁷ cycles. In addition, the FeFETs under different bending conditions exhibit excellent neuromorph

SUBMITTER: Li Q 

PROVIDER: S-EPMC10973520 | biostudies-literature | 2024 Mar

REPOSITORIES: biostudies-literature