Field enhancement of epsilon-near-zero modes in realistic ultrathin absorbing films.

ABSTRACT: Using electrodynamical description of the average power absorbed by a conducting film, we present an expression for the electric-field intensity enhancement (FIE) due to epsilon-near-zero (ENZ) polariton modes. We show that FIE reaches a limit in ultrathin ENZ films inverse of second power of ENZ losses. This is illustrated in an exemplary series of aluminum-doped zinc oxide nanolayers grown by atomic layer deposition. Only in a case of unrealistic lossless ENZ films, FIE follows the inverse second power of film thickness predicted by S. Campione, et al. [Phys. Rev. B, vol. 91, no. 12, art. 121408, 2015]. We also predict that FIE could reach values of 100,000 in ultrathin polar semiconductor films. This work is important for establishing the limits of plasmonic field enhancement and

SUBMITTER: Anopchenko A 

PROVIDER: S-EPMC11501972 | biostudies-literature | 2023 Jul

REPOSITORIES: biostudies-literature