An Ultrasensitive and Broad-Spectrum MoS₂ Photodetector with Extrinsic Response Using Surrounding Homojunction.

ABSTRACT: As unique building blocks for advancing optoelectronics, 2D semiconducting transition metal dichalcogenides have garnered significant attention. However, most previously reported MoS₂ photodetectors respond only to visible light with limited absorption, resulting in a narrow spectral response and low sensitivity. Here, a surrounding homojunction MoS₂ photodetector featuring localized p-type nitrogen plasma doping on the surface of n-type MoS₂ while preserving a high-mobility underlying channel for rapid carrier transport is engineered. The establishment of p-n homojunction facilitates the efficient separation of photogenerated carriers, thereby boosting the device's intrinsic detection performance. The resulting photoresponsivity is 6.94 × 10⁴ A 

SUBMITTER: Liu X 

PROVIDER: S-EPMC11615792 | biostudies-literature | 2024 Dec

REPOSITORIES: biostudies-literature