Van der Waals Integration of 1D Nb₂Pd₃Se₈ and 2D WSe₂ for Gate-Tunable In-Sensor Image Processing.

ABSTRACT: 1D and 2D integrations provide significant promise for machine vision by enabling compact, power-efficient optoelectronic devices. However, the potential of 1D materials in mixed-dimensional structures for convolutional image processing remains largely unexplored. Here, high-quality 1D-Nb₂Pd₃Se₈ is synthesized and integrated with 2D-WSe₂ to form self-powered photodetectors, exhibiting gate-tunable bi-directional photoresponse for image processing. Utilizing the narrow band gap and favorable work function of 1D-Nb₂Pd₃Se₈, a type-I junction and 1D van der Waals interface are established with transition metal dichalcogenides. The gate tunable built-in electric field enables switching between n-p and n-n⁺ c

SUBMITTER: Dat VK 

PROVIDER: S-EPMC12574645 | biostudies-literature | 2025 Oct

REPOSITORIES: biostudies-literature