High-density three-dimensional integration of dynamic random-access memory using vertical dual-gate IGZO TFTs.

ABSTRACT: An architecture for three-dimensional integration of dynamic random-access memory that enables higher memory density is presented as a new solution to the bottleneck currently faced in artificial intelligence deployment. The basis of this architecture is a vertical dual-gate two-transistors-zero-capacitor memory cell which yields a small feature size and reliable read operation, and naturally scalable to large-scale arrays. However, three-dimensional integration of the dynamic random-access memory faces highly-limiting challenges related to lateral misalignment and thermal cycling as a result of separate stacking processes. To solve the issues of cell misalignment and thermal cycling, a single step process is used to stack the dual-gate In-Ga-Zn-O transistors simultaneously. By optimizing

SUBMITTER: Liao F 

PROVIDER: S-EPMC12686015 | biostudies-literature | 2025 Dec

REPOSITORIES: biostudies-literature