Wafer-scale high-κ HfO₂ dielectric films with sub-5-A equivalent oxide thickness for 2D MoS₂ transistors.

ABSTRACT: High-κ gate dielectrics are indispensable in modern transistor technology and play a pivotal role in efficient capacitive gating and suppression of leakage currents. However, the realization of industry-compatible high-κ gate dielectrics at a sub-5-Å equivalent oxide thickness (EOT) remains challenging. Here we report the realization of 1.3-nm thick hafnium oxide (HfO₂) dielectrics via an industry-compatible multiple oxidation atomic layer deposition process at 200 °C. A low EOT down to 2.5 Å is demonstrated for 1.3-nm thick HfO₂ dielectrics on metal gates with a low leakage current of 10^-6 A/cm² and a robust breakdown electric field of ~22.3 MV/cm. Remarkably, such low EOT high-κ/metal gates can be directly implanted into emerging two-dimensiona

SUBMITTER: Zhang S 

PROVIDER: S-EPMC12923560 | biostudies-literature | 2026 Jan

REPOSITORIES: biostudies-literature