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Laser-induced phase separation of silicon carbide.

ABSTRACT: Understanding the phase separation mechanism of solid-state binary compounds induced by laser-material interaction is a challenge because of the complexity of the compound materials and short processing times. Here we present xenon chloride excimer laser-induced melt-mediated phase separation and surface reconstruction of single-crystal silicon carbide and study this process by high-resolution transmission electron microscopy and a time-resolved reflectance method. A single-pulse laser irradiation triggers melting of the silicon carbide surface, resulting in a phase separation into a disordered carbon layer with partially graphitic domains (∼2.5 nm) and polycrystalline silicon (∼5 nm). Additional pulse irradiations cause sublimation of only the separated silicon element and subsequent transformation of the disordered carbon layer into multilayer graphene. The results demonstrate viability of synthesizing ultra-thin nanomaterials by the decomposition of a binary system.

SUBMITTER: Choi I

PROVIDER: S-EPMC5141366 | biostudies-literature | 2016 Nov

REPOSITORIES: biostudies-literature

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Laser-induced phase separation of silicon carbide.

Choi Insung I Jeong Hu Young HY Shin Hyeyoung H Kang Gyeongwon G Byun Myunghwan M Kim Hyungjun H Chitu Adrian M AM Im James S JS Ruoff Rodney S RS Choi Sung-Yool SY Lee Keon Jae KJ

Nature communications 20161130

Understanding the phase separation mechanism of solid-state binary compounds induced by laser-material interaction is a challenge because of the complexity of the compound materials and short processing times. Here we present xenon chloride excimer laser-induced melt-mediated phase separation and surface reconstruction of single-crystal silicon carbide and study this process by high-resolution transmission electron microscopy and a time-resolved reflectance method. A single-pulse laser irradiati ...[more]

PMID: 27901015

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Project description:The effect of silicon on diffusion behavior of the carbide forming elements in Ni-Mo-Cr-Fe based corrosion-resistant alloy is studied by diffusion couple experiment. One group of diffusion couples are made of the alloy with a different silicon content, another group of diffusion couples are made of pure nickel and the alloy with different silicon content (0Si, 2Si). Two groups of alloys with same silicon content and different carbon content are also prepared, the microstructure of solution and aging state of these two groups alloys are analyzed, and their stress rupture properties are tested. The effect of silicon on the diffusion of alloy elements and the interaction effect of carbon and silicon on the microstructure and stress rupture properties of the alloy are analyzed. The mechanism of Si on the precipitation behavior of carbide phase in Ni-Mo-Cr-Fe corrosion resistant alloy is discussed. The results show that silicon can promote the diffusion of carbide forming elements and the formation of carbide. The precipitation behavior of the secondary phase is the result of the interaction effect of silicon and carbon, and is related to the thermal history of the alloy. Combined with the characteristic of primary carbides, it is confirmed that the precipitation of M12C type secondary carbide is caused by the relative lack of carbon element and the relative enrichment of carbide forming elements such as molybdenum. The stress rupture properties of two silicon-containing alloys with different carbon contents in solution and aging state are tested. The stress rupture life of low carbon alloy is lower compared with high carbon alloy at solution state, but after aging treatment, the stress rupture life of low carbon alloy is significantly improved, and higher than that of high carbon alloy. The main aim of this research is to reveal the influence mechanism of silicon on carbide phase precipitation of a Ni-Mo-Cr-Fe based corrosion-resistant superalloy, which provides theoretical basis and reference for later alloy design and engineering application.

Dataset Information

Laser-induced phase separation of silicon carbide.

Publications

Laser-induced phase separation of silicon carbide.

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