CuI p-type thin films for highly transparent thermoelectric p-n modules.

ABSTRACT: Developments in thermoelectric (TE) transparent p-type materials are scarce and do not follow the trend of the corresponding n-type materials - a limitation of the current transparent thermoelectric devices. P-type thermoelectric thin films of CuI have been developed by three different methods in order to maximise optical transparency (>70% in the visible range), electrical (σ = 1.1 × 10⁴ Sm^-1) and thermoelectric properties (ZT = 0.22 at 300 K). These have been applied in the first planar fully transparent p-n type TE modules where gallium-doped zinc oxide (GZO) thin films were used as the n-type element and indium thin oxide (ITO) thin films as electrodes. A thorough study of power output in single elements and p-n modules electrically connected in series and thermal

SUBMITTER: Morais Faustino BM 

PROVIDER: S-EPMC5932081 | biostudies-literature | 2018 May

REPOSITORIES: biostudies-literature