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Correlating dynamic strain and photoluminescence of solid-state defects with stroboscopic x-ray diffraction microscopy.


ABSTRACT: Control of local lattice perturbations near optically-active defects in semiconductors is a key step to harnessing the potential of solid-state qubits for quantum information science and nanoscale sensing. We report the development of a stroboscopic scanning X-ray diffraction microscopy approach for real-space imaging of dynamic strain used in correlation with microscopic photoluminescence measurements. We demonstrate this technique in 4H-SiC, which hosts long-lifetime room temperature vacancy spin defects. Using nano-focused X-ray photon pulses synchronized to a surface acoustic wave launcher, we achieve an effective time resolution of ~100 ps at a 25 nm spatial resolution to map micro-radian dynamic lattice curvatures. The acoustically induced lattice distortions near an engineered scattering structure are correlated with enhanced photoluminescence responses of optically-active SiC quantum defects driven by local piezoelectric effects. These results demonstrate a unique route for directly imaging local strain in nanomechanical structures and quantifying dynamic structure-function relationships in materials under realistic operating conditions.

SUBMITTER: Whiteley SJ 

PROVIDER: S-EPMC6662806 | biostudies-literature | 2019 Jul

REPOSITORIES: biostudies-literature

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Correlating dynamic strain and photoluminescence of solid-state defects with stroboscopic x-ray diffraction microscopy.

Whiteley S J SJ   Heremans F J FJ   Wolfowicz G G   Awschalom D D DD   Holt M V MV  

Nature communications 20190729 1


Control of local lattice perturbations near optically-active defects in semiconductors is a key step to harnessing the potential of solid-state qubits for quantum information science and nanoscale sensing. We report the development of a stroboscopic scanning X-ray diffraction microscopy approach for real-space imaging of dynamic strain used in correlation with microscopic photoluminescence measurements. We demonstrate this technique in 4H-SiC, which hosts long-lifetime room temperature vacancy s  ...[more]

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