Growth of highly conducting MoS_2-xN_x thin films with enhanced 1T' phase by pulsed laser deposition and exploration of their nanogenerator application.

ABSTRACT: High-quality growth of MoS_2-xN_x films is realized on single-crystal c-Al₂O₃ substrates by the pulsed laser deposition (PLD) in ammonia rendering highly stable and tunable 1T'/2H biphasic constitution. Raman spectroscopy reveals systematic enhancement of 1T' phase component due to the incorporation of covalently bonded N-doping in MoS₂ lattice, inducing compressive strain. Interestingly, the film deposited at 300 mTorr NH₃ shows ∼80% 1T' phase. The transport measurements performed on MoS_2-xN_x films deposited at 300 mTorr NH₃ display very low room temperature resistivity of 0.03 mΩ-cm which is 100 times enhanced over the undoped MoS₂ grown under comparable conditions. A triboelectric nanogenerator (TENG) device containing biphasic MoS_2-xN_x film as an electron acceptor exhibits a clear enhancement in the output voltage as compared to the pristine MoS₂. Device architecture, p-type N doping in MoS₂ lattice, favorably increased work-function, multiphasic component of MoS₂, and increased surface roughness synergistically contribute to superior TENG performance.

SUBMITTER: Parmar S 

PROVIDER: S-EPMC8881714 | biostudies-literature | 2022 Mar

REPOSITORIES: biostudies-literature