High performance and gate-controlled GeSe/HfS₂ negative differential resistance device.

ABSTRACT: Transition metal dichalcogenides (TMDs) have received significant attention owing to their thickness-dependent folded current-voltage (I _ds-V _ds) characteristics, which offer various threshold voltage values. Owing to these astonishing characteristics, TMDs based negative differential resistance (NDR) devices are preferred for the realization of multi-valued logic applications. In this study, an innovative and ground-breaking germanium selenide/hafnium disulfide (p-GeSe/n-HfS₂) TMDs van der Waals heterostructure (vdWH) NDR device is designed. An extraordinary peak-to-valley current ratio (≈5.8) was estimated at room temperature and was used to explain the tunneling and diffusion currents by using the tunneling mechanism. In addition, the p-GeS

SUBMITTER: Afzal AM 

PROVIDER: S-EPMC8979185 | biostudies-literature | 2022 Jan

REPOSITORIES: biostudies-literature