CNT-molecule-CNT (1D-0D-1D) van der Waals integration ferroelectric memory with 1-nm² junction area.

ABSTRACT: The device's integration of molecular electronics is limited regarding the large-scale fabrication of gap electrodes on a molecular scale. The van der Waals integration (vdWI) of a vertically aligned molecular layer (0D) with 2D or 3D electrodes indicates the possibility of device's integration; however, the active junction area of 0D-2D and 0D-3D vdWIs remains at a microscale size. Here, we introduce the robust fabrication of a vertical 1D-0D-1D vdWI device with the ultra-small junction area of 1 nm² achieved by cross-stacking top carbon nanotubes (CNTs) on molecularly assembled bottom CNTs. 1D-0D-1D vdWI memories are demonstrated through ferroelectric switching of azobenzene molecules owing to the cis-trans transformation combined with the permanent dipole moment of the end-ta

SUBMITTER: Phan TL 

PROVIDER: S-EPMC9374722 | biostudies-literature | 2022 Aug

REPOSITORIES: biostudies-literature