Polymorphic Ga₂S₃ nanowires: phase-controlled growth and crystal structure calculations.

ABSTRACT: The polymorphism of nanostructures is of paramount importance for many promising applications in high-performance nanodevices. We report the chemical vapor deposition synthesis of Ga₂S₃ nanowires (NWs) that show the consecutive phase transitions of monoclinic (M) → hexagonal (H) → wurtzite (W) → zinc blende (C) when lowering the growth temperature from 850 to 600 °C. At the highest temperature, single-crystalline NWs were grown in the thermodynamically stable M phase. Two types of H phase exhibited 1.8 nm periodic superlattice structures owing to the distinctively ordered Ga sites. They consisted of three rotational variants of the M phase along the growth direction ([001]_M = [0001]_H/W) but with different sequences in the variants. The phases sha

SUBMITTER: Park K 

PROVIDER: S-EPMC9419741 | biostudies-literature | 2022 Jul

REPOSITORIES: biostudies-literature