Magnetization switching in polycrystalline Mn₃Sn thin film induced by self-generated spin-polarized current.

ABSTRACT: Electrical manipulation of spins is essential to design state-of-the-art spintronic devices and commonly relies on the spin current injected from a second heavy-metal material. The fact that chiral antiferromagnets produce spin current inspires us to explore the magnetization switching of chiral spins using self-generated spin torque. Here, we demonstrate the electric switching of noncollinear antiferromagnetic state in Mn₃Sn by observing a crossover from conventional spin-orbit torque to the self-generated spin torque when increasing the MgO thickness in Ta/MgO/Mn₃Sn polycrystalline films. The spin current injection from the Ta layer can be controlled and even blocked by varying the MgO thickness, but the switching sustains even at a large MgO thickness. Furthermore,

SUBMITTER: Xie H 

PROVIDER: S-EPMC9525633 | biostudies-literature | 2022 Sep

REPOSITORIES: biostudies-literature