Dataset Information

Ion Drift and Polarization in Thin SiO₂ and HfO₂ Layers Inserted in Silicon on Sapphire.

ABSTRACT: To reduce the built-in positive charge value at the silicon-on-sapphire (SOS) phase border obtained by bonding and a hydrogen transfer, thermal silicon oxide (SiO₂) layers with a thickness of 50-310 nm and HfO₂ layers with a thickness of 20 nm were inserted between silicon and sapphire by plasma-enhanced atomic layer deposition (PEALD). After high-temperature annealing at 1100 °C, these layers led to a hysteresis in the drain current-gate voltage curves and a field-induced switching of threshold voltage in the SOS pseudo-MOSFET. For the inserted SiO₂ with a thickness of 310 nm, the transfer transistor characteristics measured in the temperature ranging from 25 to 300 °C demonstrated a triple increase in the hysteresis window with the increasing temperature. It was associated with the ion drift and the formation of electric dipoles at the silicon dioxide boundaries. A much slower increase in the window with temperature for the inserted HfO₂ layer was explained by the dominant ferroelectric polarization switching in the inserted HfO₂ layer. Thus, the experiments allowed for a separation of the effects of mobile ions and ferroelectric polarization on the observed transfer characteristics of hysteresis in structures of Si/HfO₂/sapphire and Si/SiO₂/sapphire.

SUBMITTER: Popov VP

PROVIDER: S-EPMC9565775 | biostudies-literature | 2022 Sep

REPOSITORIES: biostudies-literature

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Ion Drift and Polarization in Thin SiO2 and HfO2 Layers Inserted in Silicon on Sapphire.

Popov Vladimir P VP Antonov Valentin A VA Miakonkikh Andrey V AV Rudenko Konstantin V KV

Nanomaterials (Basel, Switzerland) 20220928 19

To reduce the built-in positive charge value at the silicon-on-sapphire (SOS) phase border obtained by bonding and a hydrogen transfer, thermal silicon oxide (SiO2) layers with a thickness of 50-310 nm and HfO2 layers with a thickness of 20 nm were inserted between silicon and sapphire by plasma-enhanced atomic layer deposition (PEALD). After high-temperature annealing at 1100 °C, these layers led to a hysteresis in the drain current-gate voltage curves and a field-induced ...[more]

PMID: 36234528

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Project description:The structural and electronic properties of thin films are crucial for the performance of heterojunction diodes, which are key components in modern electronic devices. Optimizing these properties through advanced materials and fabrication techniques is an area of significant research, particularly in reducing leakage currents and enhancing device reliability. This study investigates the structural characteristics of a monolayer HfO2 and a double layer ZnO/HfO2 interface layer. This research specifically examines the impact of an HfO2 interface layer on the current transport properties of n-ZnO/p-Si heterojunction diodes, because understanding the current transport mechanisms in ZnO and HfO2 thin films, especially in relation to reducing defects and leakage currents, presents a challenge. Current-voltage characterization reveals that these diodes, grown by sol-gel spin coating. exhibit current transport behavior consistent with tunneling, with exponential trap distributions contributing under high voltage bias conditions. A thermionic emission (TE) mechanism is observed at low voltages (V < 0.4 V), followed by space-charge limited conduction (SCLC) at medium voltages (V < 0.5 V), and a trap charge limited current (TCLC) mechanism at high voltages (V > 1 V) in the dark forward current-voltage characteristics. The incorporation of the n-ZnO/HfO2/p-Si structure significantly reduces leakage currents associated with defects. These findings advance the understanding of ZnO/HfO2-based heterojunction diodes and pave the way for their potential application in more efficient electronic devices. The X-ray diffraction (XRD) spectra have revealed that all films crystallize in the hexagonal wurtzite structure. Structural parameters such as crystallite size, dislocation density, and microstrain in the crystal structure have been calculated. The coating thicknesses and elemental distributions of thin-film samples were determined from Field emission scanning electron microscopy (FE-SEM) images obtained from both surface and cross-sectional views. The energy band gaps of HfO2 and ZnO/HfO2 thin films were determined using absorption measurements obtained with a ultraviolet (UV) spectrophotometer. The surface roughness and topography information on thin-film samples were determined from Atomic force microscopy (AFM).

Dataset Information

Ion Drift and Polarization in Thin SiO₂ and HfO₂ Layers Inserted in Silicon on Sapphire.

Publications

Ion Drift and Polarization in Thin SiO<sub>2</sub> and HfO<sub>2</sub> Layers Inserted in Silicon on Sapphire.

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