Thermal Atomic Layer Etching of MoS₂ Using MoF₆ and H₂O.

ABSTRACT: Two-dimensional (2D) layered materials offer unique properties that make them attractive for continued scaling in electronic and optoelectronic device applications. Successful integration of 2D materials into semiconductor manufacturing requires high-volume and high-precision processes for deposition and etching. Several promising large-scale deposition approaches have been reported for a range of 2D materials, but fewer studies have reported removal processes. Thermal atomic layer etching (ALE) is a scalable processing technique that offers precise control over isotropic material removal. In this work, we report a thermal ALE process for molybdenum disulfide (MoS₂). We show that MoF₆ can be used as a fluorination source, which, when combined with alternating exposure

SUBMITTER: Soares J 

PROVIDER: S-EPMC9933903 | biostudies-literature | 2023 Feb

REPOSITORIES: biostudies-literature