A Photonic 1 × 4 Power Splitter Based on Multimode Interference in Silicon-Gallium-Nitride Slot Waveguide Structures.
Ontology highlight
ABSTRACT:
SUBMITTER: Malka D
PROVIDER: S-EPMC5456935 | biostudies-other | 2016 Jun
REPOSITORIES: biostudies-other
Shared Molecules
Only show the datasets with similarity scores above: 0.5
Threshold
0.5
Similar Datasets
Project description:The continuous push for high-performance photonic switches is one of the most crucial premises for the sustainable scaling of programmable and reconfigurable photonic circuits for a wide spectrum of applications. Conventional optical switches rely on the perturbative mechanisms of mode coupling or mode interference, resulting in inherent bottlenecks in their switching performance concerning size, power consumption and bandwidth. Here we propose and realize a silicon photonic 2×2 elementary switch based on a split waveguide crossing (SWX) consisting of two halves. The propagation direction of the incident light is manipulated to implement the OFF/ON states by splitting/combining the two halves of the SWX, showing excellent performance with low excess loss and low crosstalk over an ultrawide bandwidth. Both elementary switch and a 64×64 switch array based on Benes topology are fabricated and characterized, demonstrating great potential for practical scenarios such as photonic interconnect/routing, Lidar and spectroscopy, photonic computing, as well as microwave photonics.
| S-EPMC11696265 | biostudies-literature
Project description:Silicon photonics is an emerging platform for acoustic sensing, offering exceptional miniaturization and sensitivity. While efforts have focused on silicon-based resonators, silicon nitride resonators can potentially achieve higher Q-factors, further enhancing sensitivity. In this work, a 30 µm silicon nitride microring resonator was fabricated and coated with an elastomer to optimize acoustic sensitivity and signal fidelity. The resonator was characterized acoustically, and its capability for optoacoustic tomography was demonstrated. An acoustic bandwidth of 120 MHz and a noise-equivalent pressure of ∼ 7 mPa/Hz1/2 were demonstrated. The spatially dependent impulse response agreed with theoretical predictions, and spurious acoustic signals, such as reverberations and surface acoustic waves, had a marginal impact. High image fidelity optoacoustic tomography of a 20 µm knot was achieved, confirming the detector's imaging capabilities. The results show that silicon nitride offers low signal distortion and high-resolution optoacoustic imaging, proving its versatility for acoustic imaging applications.
| S-EPMC10461202 | biostudies-literature
Project description:Thick metamorphic buffers are considered indispensable for III-V semiconductor heteroepitaxy on large lattice and thermal-expansion mismatched silicon substrates. However, III-nitride buffers in conventional GaN-on-Si high electron mobility transistors (HEMT) impose a substantial thermal resistance, deteriorating device efficiency and lifetime by throttling heat extraction. To circumvent this, a systematic methodology for the direct growth of GaN after the AlN nucleation layer on six-inch silicon substrates is demonstrated using metal-organic vapor phase epitaxy (MOVPE). Crucial growth-stress modulation to prevent epilayer cracking is achieved even without buffers, and threading dislocation densities comparable to those in buffered structures are realized. The buffer-less design yields a GaN-to-substrate thermal resistance of (11 ± 4) m2 K GW-1, an order of magnitude reduction over conventional GaN-on-Si and one of the lowest on any non-native substrate. As-grown AlGaN/AlN/GaN heterojunctions on this template show a high-quality 2D electron gas (2DEG) whose room-temperature Hall-effect mobility exceeds 2000 cm2 V-1 s-1, rivaling the best-reported values. As further validation, the low-temperature magnetoresistance of this 2DEG shows clear Shubnikov-de-Haas oscillations, a quantum lifetime > 0.180 ps, and tell-tale signatures of spin-splitting. These results could establish a new platform for III-nitrides, potentially enhancing the energy efficiency of power transistors and enabling fundamental investigations into electron dynamics in quasi-2D wide-bandgap systems.
| S-EPMC11881668 | biostudies-literature
Project description:The availability of thin-film lithium niobate on insulator (LNOI) and advances in processing have led to the emergence of fully integrated LiNbO3 electro-optic devices. Yet to date, LiNbO3 photonic integrated circuits have mostly been fabricated using non-standard etching techniques and partially etched waveguides, that lack the reproducibility achieved in silicon photonics. Widespread application of thin-film LiNbO3 requires a reliable solution with precise lithographic control. Here we demonstrate a heterogeneously integrated LiNbO3 photonic platform employing wafer-scale bonding of thin-film LiNbO3 to silicon nitride (Si3N4) photonic integrated circuits. The platform maintains the low propagation loss (<0.1 dB/cm) and efficient fiber-to-chip coupling (<2.5 dB per facet) of the Si3N4 waveguides and provides a link between passive Si3N4 circuits and electro-optic components with adiabatic mode converters experiencing insertion losses below 0.1 dB. Using this approach we demonstrate several key applications, thus providing a scalable, foundry-ready solution to complex LiNbO3 integrated photonic circuits.
| S-EPMC10264395 | biostudies-literature
Project description:Coherent optomechanical interaction known as stimulated Brillouin scattering (SBS) can enable ultrahigh resolution signal processing and narrow-linewidth lasers. SBS has recently been studied extensively in integrated waveguides; however, many implementations rely on complicated fabrication schemes. The absence of SBS in standard and mature fabrication platforms prevents its large-scale circuit integration. Notably, SBS in the emerging silicon nitride (Si3N4) photonic integration platform is currently out of reach because of the lack of acoustic guidance. Here, we demonstrate advanced control of backward SBS in multilayer Si3N4 waveguides. By optimizing the separation between two Si3N4 layers, we unlock acoustic waveguiding in this platform, potentially leading up to 15× higher Brillouin gain coefficient than previously possible in Si3N4 waveguides. We use the enhanced SBS gain to demonstrate a high-rejection microwave photonic notch filter. This demonstration opens a path to achieving Brillouin-based photonic circuits in a standard, low-loss Si3N4 platform.
| S-EPMC9544327 | biostudies-literature
Project description:Recent studies have shown that evanescent Raman spectroscopy using a silicon nitride (SiN) nanophotonic waveguide platform has higher signal enhancement when compared to free-space systems. However, signal-to-noise ratio from the waveguide at a low analyte concentration is constrained by the shot-noise from the background light originating from the waveguide itself. Hence, understanding the origin and properties of this waveguide background luminescence (WGBL) is essential to developing mitigation strategies. Here, we identify the dominating component of the WGBL spectrum composed of a broad Raman scattering due to momentum selection-rule breaking in amorphous materials, and several peaks specific to molecules embedded in the core. We determine the maximum of the Raman scattering efficiency of the WGBL at room temperature for 785 nm excitation to be 4.5 ± 1 × 10-9 cm-1·sr-1, at a Stokes shift of 200 cm-1. This efficiency decreases monotonically for higher Stokes shifts. Additionally, we also demonstrate the use of slotted waveguides and quasi-transverse magnetic polarization as some mitigation strategies.
| S-EPMC5459205 | biostudies-other
Project description:Visible and near-infrared spectrum photonic integrated circuits are quickly becoming a key technology to address the scaling challenges in quantum information and biosensing. Thus far, integrated photonic platforms in this spectral range have lacked integrated photodetectors. Here, we report silicon nitride-on-silicon waveguide photodetectors that are monolithically integrated in a visible light photonic platform on silicon. Owing to a leaky-wave silicon nitride-on-silicon design, the devices achieved a high external quantum efficiency of >60% across a record wavelength span from λ ~ 400 nm to ~640 nm, an opto-electronic bandwidth up to 9 GHz, and an avalanche gain-bandwidth product up to 173 ± 30 GHz. As an example, a photodetector was integrated with a wavelength-tunable microring in a single chip for on-chip power monitoring.
| S-EPMC9606291 | biostudies-literature
Project description:We report single crystalline gallium nitride nanowire growth from Ni and Ni-Au catalysts on silicon using hydride vapor phase epitaxy. The growth takes place rapidly; efficiency in time is higher than the conventional nanowire growth in metal-organic chemical vapor deposition and thin film growth in molecular beam epitaxy. The effects of V/III ratio and carrier gas flow on growth are discussed regarding surface polarity and sticking coefficient of molecules. The nanowires of gallium nitride exhibit excellent crystallinity with smooth and straight morphology and uniform orientation. The growth mechanism follows self-assembly from both catalysts, where Au acts as a protection from etching during growth enabling the growth of ultra-long nanowires. The photoluminescence of such nanowires are adjustable by tuning the growth parameters to achieve blue emission. The practical range of parameters for mass production of such high crystal quality and uniformity of nanowires is suggested.
| S-EPMC5738410 | biostudies-literature
Project description:Quantum information processing holds great promise for communicating and computing data efficiently. However, scaling current photonic implementation approaches to larger system size remains an outstanding challenge for realizing disruptive quantum technology. Two main ingredients of quantum information processors are quantum interference and single-photon detectors. Here we develop a hybrid superconducting-photonic circuit system to show how these elements can be combined in a scalable fashion on a silicon chip. We demonstrate the suitability of this approach for integrated quantum optics by interfering and detecting photon pairs directly on the chip with waveguide-coupled single-photon detectors. Using a directional coupler implemented with silicon nitride nanophotonic waveguides, we observe 97% interference visibility when measuring photon statistics with two monolithically integrated superconducting single-photon detectors. The photonic circuit and detector fabrication processes are compatible with standard semiconductor thin-film technology, making it possible to implement more complex and larger scale quantum photonic circuits on silicon chips.
| S-EPMC4735806 | biostudies-literature
Project description:Silicon photonic waveguide resonators, such as microring resonators, photonic crystal waveguide cavities, and Fabry-Perot resonators based on the distributed Bragg reflectors, are key device components for silicon-based photonic integrated circuits (Si-PIC). For the Si-PIC with high integration density, the device footprints of the conventional photonic waveguide resonators need to be more compact. Inverse design, which is operated by the design expectation and different from the conventional design methods, has been investigated for reducing the photonic device components nowadays. In this paper, we inversely designed the silicon photonic waveguide reflectors for two target wavelengths: one is 1310 nm and the other is 1550 nm. The silicon photonic waveguide reflectors have reflectance of 0.99993 and 0.9955 for the wavelength of 1310 nm and 1550 nm each with 5-μm-long reflectors. Also, we theoretically investigated Fabry-Perot resonators based on the inversely designed photonic waveguide reflectors. Q factors of the Fabry-Perot resonators have been calculated to be 1.3 × 105 for the wavelength of 1310 nm and 2583 for the wavelength of 1550 nm. We have expected that the inversely designed photonic waveguide reflectors and their applications for the Fabry-Perot resonators can be utilized for compact passive/active device components such as wavelength filters, modulators, and external cavity lasers.
| S-EPMC11501554 | biostudies-literature