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Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel.

ABSTRACT: In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si0.57Ge0.43/Si) through microwave annealing (MWA) ranging from 200 to 470 °C for 150 s in N₂ ambient. MWA has the advantage of being diffusion-less during activation, having a low-temperature process, have a lower junction leakage current, and having low sheet resistance (Rs) and contact resistivity. In our study, a 20 nm NiSiGe Schottky junction was formed by TEM and XRD analysis at MWA 390 °C. The NiSiGe/n-Si Schottky junction exhibits the highest forward/reverse current (ION/IOFF) ratio of ~3 × 10⁵. The low temperature MWA is a very promising thermal process technology for NiSiGe Schottky junction manufacturing.

SUBMITTER: Lin YH

PROVIDER: S-EPMC5458906 | biostudies-other | 2015 Nov

REPOSITORIES: biostudies-other

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