A Multilayered GaAs IPD Resonator with Five Airbridges for Sensor System Application.

ABSTRACT: This work proposes a microwave resonator built from gallium arsenide using integrated passive device (IPD) technology. It consists of a three-layered interlaced spiral structure with airbridges and inner interdigital structures. For integrated systems, IPD technology demonstrated outstanding performance, robustness, and a tiny size at a low cost. The airbridges were made more compact, with overall dimensions of 1590 × 800 µm² (0.038 × 0.019 λg²). The designed microwave resonator operated at 1.99 GHz with a return loss of 39 dB, an insertion loss of 0.07 dB, and a quality factor of 1.15. Additionally, an experiment was conducted on the properties of the airbridge and how they affected resistance, inductance, and S-parameters in the construction of the resonator. To inv

SUBMITTER: Zhang XY 

PROVIDER: S-EPMC10972498 | biostudies-literature | 2024 Mar

REPOSITORIES: biostudies-literature