Ion sensing with single charge resolution using sub-10-nm electrical double layer-gated silicon nanowire transistors.

ABSTRACT: Electrical sensors have been widely explored for the analysis of chemical/biological species. Ion detection with single charge resolution is the ultimate sensitivity goal of such sensors, which is yet to be experimentally demonstrated. Here, the events of capturing and emitting a single hydrogen ion (H⁺) at the solid/liquid interface are directly detected using sub–10-nm electrical double layer–gated silicon nanowire field-effect transistors (SiNWFETs). The SiNWFETs are fabricated using a complementary metal-oxide-semiconductor compatible process, with a surface reassembling step to minimize the device noise. An individually activated surface Si dangling bond (DB) acts as the single H⁺ receptor. Discrete current signals, generated by the single H⁺-DB intera

SUBMITTER: Hu Q 

PROVIDER: S-EPMC8641926 | biostudies-literature | 2021 Dec

REPOSITORIES: biostudies-literature