Self-catalyst β-Ga₂O₃ semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors.

ABSTRACT: Monoclinic gallium oxide (β-Ga₂O₃) is a super-wide bandgap semiconductor with excellent chemical and thermal stability, which is an ideal candidate for detecting deep ultraviolet (DUV) radiation (100-280 nm). The growth of β-Ga₂O₃ is challenging and most methods require Au as the catalyst and a long reacting time (more than 1 hour). In this work, the self-catalyst β-Ga₂O₃ lateral nanowire networks were synthesized on an insulating substrate rapidly by a simple low-cost Chemical Vapor Deposition (CVD) method. A thin film of β-Ga₂O₃ nanowire networks was synthesized within a reacting time of 15 minutes, which possesses a huge possibility for the rapid growth of β-Ga₂O₃ metal oxide na

SUBMITTER: Wu Y 

PROVIDER: S-EPMC9038025 | biostudies-literature | 2021 Aug

REPOSITORIES: biostudies-literature