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Self-catalyst β-Ga₂O₃ semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors.

ABSTRACT: Monoclinic gallium oxide (β-Ga₂O₃) is a super-wide bandgap semiconductor with excellent chemical and thermal stability, which is an ideal candidate for detecting deep ultraviolet (DUV) radiation (100-280 nm). The growth of β-Ga₂O₃ is challenging and most methods require Au as the catalyst and a long reacting time (more than 1 hour). In this work, the self-catalyst β-Ga₂O₃ lateral nanowire networks were synthesized on an insulating substrate rapidly by a simple low-cost Chemical Vapor Deposition (CVD) method. A thin film of β-Ga₂O₃ nanowire networks was synthesized within a reacting time of 15 minutes, which possesses a huge possibility for the rapid growth of β-Ga₂O₃ metal oxide nanowires networks and application in the future solar-blind photodetector. MSM (metal-semiconductor-metal) photodetectors based on the β-Ga₂O₃ nanowire networks revealed fast response (on-off ratios is about 10³), which is attributed to the unique cross-junction barrier-dominated conductance of the nanowire networks. In addition, the self-catalyst β-Ga₂O₃ nanowires grown on insulating SiO₂ are achieved and could be expected to find important applications in a bottom-up way of fabricating the next generation semiconductor nanoelectronics.

SUBMITTER: Wu Y

PROVIDER: S-EPMC9038025 | biostudies-literature | 2021 Aug

REPOSITORIES: biostudies-literature

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Self-catalyst β-Ga2O3 semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors.

Wu Yutong Y Feng Shuanglong S Zhang Miaomiao M Kang Shuai S Zhang Kun K Tao Zhiyong Z Fan Yaxian Y Lu Wenqiang W

RSC advances 20210820 45

Monoclinic gallium oxide (β-Ga2O3) is a super-wide bandgap semiconductor with excellent chemical and thermal stability, which is an ideal candidate for detecting deep ultraviolet (DUV) radiation (100-280 nm). The growth of β-Ga2O3 is challenging and most methods require Au as the catalyst and a long reacting time (more than 1 hour). In this work, the self-catalyst β-Ga2O3 lateral nanowire networks were synthesized on an insulating ...[more]

PMID: 35480721

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Project description:It is generally known that a layer of amorphous silicon oxide (SiO2) naturally exists on the surface of silicon, resulting in the growth of gallium oxide (Ga2O3) that is no longer affected by substrate crystallinity during sputtering. This work highlights the formation energy between the native amorphous nano-oxide film formed on the Si substrate and monoclinic β-Ga2O3 dominating the preferred orientation prepared for deep ultraviolet photodetectors. The latter were deposited on p-type silicon (p-Si) with (111) orientation using radio frequency sputtering at 600 °C and post rapid thermal annealing (RTA). The X-ray diffraction (XRD) results indicate both as-deposited and postannealing films with the (400) preferred orientation for a layer thickness of 100 nm. However, slight random orientation with the amorphous structure is mixed in the preferred one for the as-deposited film with a thickness of 200 nm and reduced after being annealed at 800 °C, which is observed by XRD and transmission electron microscopy. Meanwhile, thermal-induced massive twin boundaries (TBs) and stacking faults (SFs) were generated when annealed at 1000 °C, owing to the relaxation of lattice strain by the coherent interface. The interfacial bonding energy per unit area (E i) between β-Ga2O3 films with various facets ((001), (010), (100), and (2̅01)) and amorphous SiO2 was calculated using density functional theory. The E i of β-Ga2O3 (100)/SiO2 reveals the highest value (0.289 eV/Å2), which is consistent with the (100) preferred orientation of deposited films. The (100) preferred orientation is the driving force for TBs and SFs. The discrimination of responsivities and the photo/dark current contrast ratio (I ph/I dark) are inversely proportional to the amorphous structure, grain boundaries, TBs, and SFs. Therefore, optimum metal-semiconductor-metal photodetector performance is achieved for RTA-treated samples at 800 °C with an I ph/I dark of 3.91 × 102 and a responsivity of 0.702 A/W (λpeak = 230 nm) at 5 V bias for a 200 nm thin film.

Dataset Information

Self-catalyst β-Ga₂O₃ semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors.

Publications

Self-catalyst β-Ga<sub>2</sub>O<sub>3</sub> semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors.

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