A vapor-phase-assisted growth route for large-scale uniform deposition of MoS₂ monolayer films.

ABSTRACT: In this work a vapor-phase-assisted approach for the synthesis of monolayer MoS₂ is demonstrated, based on the sulfurization of thin MoO_3-x precursor films in an H₂S atmosphere. We discuss the co-existence of various possible growth mechanisms, involving solid-gas and vapor-gas reactions. Different sequences were applied in order to control the growth mechanism and to obtain monolayer films. These variations include the sample temperature and a time delay for the injection of H₂S into the reaction chamber. The optimized combination allows for tuning the process route towards the potentially more favorable vapor-gas reactions, leading to an improved material distribution on the substrate surface. Raman and photoluminescence (PL) spectroscop

SUBMITTER: Pareek D 

PROVIDER: S-EPMC9059526 | biostudies-literature | 2018 Dec

REPOSITORIES: biostudies-literature