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Bending effect on the resistive switching behavior of a NiO/TiO₂ p-n heterojunction.

ABSTRACT: Herein, NiO/TiO₂ heterojunctions were fabricated by sol-gel spin coating on plastic substrates to investigate the effects of bending on resistive switching. The switching mechanism is well explained by the formation and rupture of oxygen-vacancy conducting filaments modulated by the p-n interface. Compared with that of the unbent film, the device ON/OFF ratio is slightly improved after 5000 bending repetitions. Finite element calculations indicate that the tensile stress of 0.79% can lead to the formation of channel cracks. Further charge transport analysis shows that the conducting filaments may cause an incomplete rupture because the bending-induced channel crack permeates through the p-n interface and reduces the local depletion-region width.

SUBMITTER: Cui HP

PROVIDER: S-EPMC9080738 | biostudies-literature | 2018 May

REPOSITORIES: biostudies-literature

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Bending effect on the resistive switching behavior of a NiO/TiO2 p-n heterojunction.

Cui Hai-Peng HP Li Jian-Chang JC Yuan Hai-Lin HL

RSC advances 20180530 35

Herein, NiO/TiO2 heterojunctions were fabricated by sol-gel spin coating on plastic substrates to investigate the effects of bending on resistive switching. The switching mechanism is well explained by the formation and rupture of oxygen-vacancy conducting filaments modulated by the p-n interface. Compared with that of the unbent film, the device ON/OFF ratio is slightly improved after 5000 bending repetitions. Finite element calculations indicate that the tensile stress of 0.79% can ...[more]

PMID: 35540998

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