Emergent solution based IGZO memristor towards neuromorphic applications.

ABSTRACT: Solution-based memristors are emergent devices, due to their potential in electrical performance for neuromorphic computing combined with simple and cheap fabrication processes. However, to achieve practical application in crossbar design tens to hundreds of uniform memristors are required. Regarding this, the production step optimization should be considered as the main objective to achieve high performance devices. In this work, solution-based indium gallium zinc oxide (IGZO) memristor devices are produced using a combustion synthesis process. The performance of the device is optimized by using different annealing temperatures and active layer thicknesses to reach a higher reproducibility and stability. All IGZO memristors show a low operating voltage, good endurance, and retention up to

SUBMITTER: Martins RA 

PROVIDER: S-EPMC9241358 | biostudies-literature | 2022 Feb

REPOSITORIES: biostudies-literature