Emergent solution based IGZO memristor towards neuromorphic applications† † Electronic supplementary information (ESI) available: Relevant data related to the material and electrical characterization of the memristors. Fig. S1(a and b) showing the transmittance of IGZO thin films with several thicknesses, with respect to each annealing temperature. Fig. S2(a and b) depicting the FTIR spectra of IGZO thin films annealed at different temperatures. Fig. S3 showing an AFM deflection image of an IGZO sample. Fig. S4 and S5 showing the XPS depth profiles of samples annealed at 200 °C and 300 °C, respectively. Fig. S6 depicting the ellipsometry spectroscopy values of the thickness of the active layer corresponding to the number of IGZO layers deposited. Fig. S7 showing the electroforming of the IGZO memristors. Fig. S8 indicating the set and reset voltage variability of each device studied. Fig. S9 containing the conductance fluctuation of the on and off state of each studied memristor. Figur

ABSTRACT: Solution-based memristors are emergent devices, due to their potential in electrical performance for neuromorphic computing combined with simple and cheap fabrication processes. However, to achieve practical application in crossbar design tens to hundreds of uniform memristors are required. Regarding this, the production step optimization should be considered as the main objective to achieve high performance devices. In this work, solution-based indium gallium zinc oxide (IGZO) memristor devices are produced using a combustion synthesis process. The performance of the device is optimized by using different annealing temperatures and active layer thicknesses to reach a higher reproducibility and stability. All IGZO memristors show a low operating voltage, good endurance, and retention up to 105 s under air conditions. The optimized devices can be programmed in a multi-level cell operation mode, with 8 different resistive states. Also, preliminary results reveal synaptic behavior by replicating the plasticity of a synaptic junction through potentiation and depression; this is a significant step towards low-cost processes and large-scale compatibility of neuromorphic computing systems. Solution-based memristors are emergent devices, due to their potential in electrical performance for neuromorphic computing combined with simple and cheap fabrication processes.

SUBMITTER: Martins R 

PROVIDER: S-EPMC9241358 | biostudies-literature | 2022 Jan

REPOSITORIES: biostudies-literature