High-Resolution Mapping of Strain Partitioning and Relaxation in InGaN/GaN Nanowire Heterostructures.

ABSTRACT: Growing an In_x Ga_{1- x} N/GaN (InGaN/GaN) multi-quantum well (MQW) heterostructure in nanowire (NW) form is expected to overcome limitations inherent in light-emitting diodes (LEDs) based on the conventional planar heterostructure. The epitaxial strain induced in InGaN/GaN MQW heterostructure can be relaxed through the sidewalls of NW, which is beneficial to LEDs because a much larger misfit strain with higher indium concentration can be accommodated with reduced piezoelectric polarization fields. The strain relaxation, however, renders highly complex strain distribution within the NW heterostructure. Here the authors show that complementary strain mapping using scanning transmission electron microscopy and dark-field inline holography can comprehend the stra

SUBMITTER: Park B 

PROVIDER: S-EPMC9353496 | biostudies-literature | 2022 Aug

REPOSITORIES: biostudies-literature