Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistry.

ABSTRACT: Two-dimensional transition metal dichalcogenides, such as MoS₂, are intensely studied for applications in electronics. However, the difficulty of depositing large-area films of sufficient quality under application-relevant conditions remains a major challenge. Herein, we demonstrate deposition of polycrystalline, wafer-scale MoS₂, TiS₂, and WS₂ films of controlled thickness at record-low temperatures down to 100 °C using plasma-enhanced atomic layer deposition. We show that preventing excess sulfur incorporation from H₂S-based plasma is the key to deposition of crystalline films, which can be achieved by adding H₂ to the plasma feed gas. Film composition, crystallinity, growth, morphology, and electrical properties of MoS

SUBMITTER: Mattinen M 

PROVIDER: S-EPMC9404538 | biostudies-literature | 2022 Aug

REPOSITORIES: biostudies-literature