Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices.
Ontology highlight
ABSTRACT: We investigate the intrinsic performance of vertical and lateral graphene-based heterostructure field-effect transistors, currently considered the most promising options to exploit graphene properties in post-CMOS electronics. We focus on three recently proposed graphene-based transistors, that in experiments have exhibited large current modulation. Our analysis is based on device simulations including the self-consistent solution of the electrostatic and transport equations within the Non-Equilibrium Green's Function formalism. We show that the lateral heterostructure transistor has the potential to outperform CMOS technology and to meet the requirements of the International Technology Roadmap for Semiconductors for the next generation of semiconductor integrated circuits. On the other hand, we find that vertical heterostructure transistors miss these performance targets by several orders of magnitude, both in terms of switching frequency and delay time, due to large intrinsic capacitances, and unavoidable current/capacitance tradeoffs.
Project description:Research in graphene-based electronics is recently focusing on devices based on vertical heterostructures of two-dimensional materials. Here we use density functional theory and multiscale simulations to investigate the tunneling properties of single- and double-barrier structures with graphene and few-layer hexagonal boron nitride (h-BN) or hexagonal boron carbon nitride (h-BC2N). We find that tunneling through a single barrier exhibit a weak dependence on energy. We also show that in double barriers separated by a graphene layer we do not observe resonant tunneling, but a significant increase of the tunneling probability with respect to a single barrier of thickness equal to the sum of the two barriers. This is due to the fact that the graphene layer acts as an effective phase randomizer, suppressing resonant tunneling and effectively letting a double-barrier structure behave as two single-barriers in series. Finally, we use multiscale simulations to reproduce a current-voltage characteristics resembling that of a resonant tunneling diode, that has been experimentally observed in single barrier structure. The peak current is obtained when there is perfect matching between the densities of states of the cathode and anode graphene regions.
Project description:Two-dimensional van der Waals (2D vdW) material-based heterostructure devices have been widely studied for high-end electronic applications owing to their heterojunction properties. In this study, we demonstrate graphene (Gr)-bridge heterostructure devices consisting of laterally series-connected ambipolar semiconductor/Gr-bridge/n-type molybdenum disulfide as a channel material for field-effect transistors (FET). Unlike conventional FET operation, our Gr-bridge devices exhibit non-classical transfer characteristics (humped transfer curve), thus possessing a negative differential transconductance. These phenomena are interpreted as the operating behavior in two series-connected FETs, and they result from the gate-tunable contact capacity of the Gr-bridge layer. Multi-value logic inverters and frequency tripler circuits are successfully demonstrated using ambipolar semiconductors with narrow- and wide-bandgap materials as more advanced circuit applications based on non-classical transfer characteristics. Thus, we believe that our innovative and straightforward device structure engineering will be a promising technique for future multi-functional circuit applications of 2D nanoelectronics.
Project description:The bandgap dependence on the number of atomic layers of some families of two-dimensional (2D) materials can be exploited to engineer and use lateral heterostructures (LHs) as high-performance field-effect transistors (FETs). This option can provide very good lattice matching as well as high heterointerface quality. More importantly, this bandgap modulation with layer stacking can give rise to steep transitions in the density of states (DOS) of the 2D material that can eventually be used to achieve sub-60 mV/decade subthreshold swing in LH-FETs thanks to an energy-filtering source. We have observed this effect in the case of a PdS2 LH-FET due to the particular DOS of its bilayer configuration. Our results are based on ab initio and multiscale materials and device modeling and incite the exploration of the 2D-material design space in order to find more abrupt DOS transitions and better suitable candidates.
Project description:Van der Waals heterostructures composed of two-dimensional (2D) transition metal dichalcogenides (TMD) materials have stimulated tremendous research interest in various device applications, especially in energy-efficient future-generation electronics. Such ultra-thin stacks as tunnel junction theoretically present unprecedented possibilities of tunable relative band alignment and pristine interfaces, which enable significant performance enhancement for steep-slope tunneling transistors. In this work, the optimal 2D-2D heterostructure for tunneling transistors is presented and elaborately engineered, taking into consideration both electric properties and material stability. The key challenges, including band alignment and metal-to-2D semiconductor contact resistances, are optimized separately for integration. By using a new dry transfer technique for the vertical stack, the selected WS2/SnS2 heterostructure-based tunneling transistor is fabricated for the first time, and exhibits superior performance with comparable on-state current and steeper subthreshold slope than conventional FET, as well as on-off current ratio over 106 which is among the highest value of 2D-2D tunneling transistors. A visible negative differential resistance feature is also observed. This work shows the great potential of 2D layered semiconductors for new heterostructure devices and can guide possible development of energy-efficient future-generation electronics.
Project description:Two-dimensional materials based vertical field-effect transistors have been widely studied due to their useful applications in industry. In the present study, we fabricate graphene/MoS₂/(Cr/Au) vertical transistor based on the mechanical exfoliation and dry transfer method. Since the bottom electrode was made of monolayer graphene (Gr), the electrical transport in our Gr/MoS₂/(Cr/Au) vertical transistors can be significantly modified by using back-gate voltage. Schottky barrier height at the interface between Gr and MoS₂ can be modified by back-gate voltage and the current bias. Vertical resistance (Rvert) of a Gr/MoS₂/(Cr/Au) transistor is compared with planar resistance (Rplanar) of a conventional lateral MoS₂ field-effect transistor. We have also studied electrical properties for various thicknesses of MoS₂ channels in both vertical and lateral transistors. As the thickness of MoS₂ increases, Rvert increases, but Rplanar decreases. The increase of Rvert in the thicker MoS₂ film is attributed to the interlayer resistance in the vertical direction. However, Rplanar shows a lower value for a thicker MoS₂ film because of an excess of charge carriers available in upper layers connected directly to source/drain contacts that limits the conduction through layers closed to source/drain electrodes. Hence, interlayer resistance associated with these layers contributes to planer resistance in contrast to vertical devices in which all layers contribute interlayer resistance.
Project description:This study demonstrates the use of computational methods to simulate the molecular dynamics involved in hemoglobin concentration sensing, utilizing Material Studio and the TCAD Silvaco device simulator. A non-invasive and flexible Graphene/MoS2 heterostructure has been proposed for sensing hemoglobin concentration in blood samples. The findings reveal a notable shift in the wavelength-dependent refractive index and extinction coefficient, as well as significant changes in the absorption coefficient and reflectivity of the Graphene/MoS2 heterostructure in response to different hemoglobin concentrations, specifically within an approximate range of 0.3 μm to 1 μm. Moreover, the spectral response of the heterostructure demonstrates that at a particular wavelength of approximately 600 nm, a maximum response is obtained. This wavelength can be considered optimal for detecting various levels of hemoglobin using this heterostructure. The anticipated outcome is a comprehensive understanding of the fundamental principles, ultimately resulting in the development of an exceptionally sensitive platform for detecting hemoglobin concentration.
Project description:Quantum anomalous Hall (QAH) effect, with potential applications in low-power-consumption electronics, is predicted in the heterostructure of graphene on the (001) surface of a real antiferromagnetic insulator RbMnCl3, based on density-functional theory and Wannier function methods. Due to the interactions from the substrate, a much large exchange field (about 280 meV) and an enhanced Rashba spin-orbit coupling are induced in graphene, leading to a topologically nontrivial QAH gap opened in the system. The avenues of enhancing the nontrivial gap are also proposed, from which nearly a gap one order large is achieved. Our work demonstrates that this graphene-based heterostructure is an appropriate candidate to be employed to experimentally observe the QAH effect and explore the promising applications.
Project description:Graphene emerges as a viable material for optoelectronics because of its broad optical response and gate-tunable properties. For practical applications, however, single layer graphene has performance limits due to its small optical absorption defined by fundamental constants. Here, we demonstrated a new class of flexible electrochromic devices using multilayer graphene (MLG) which simultaneously offers all key requirements for practical applications; high-contrast optical modulation over a broad spectrum, good electrical conductivity and mechanical flexibility. Our method relies on electro-modulation of interband transition of MLG via intercalation of ions into the graphene layers. The electrical and optical characterizations reveal the key features of the intercalation process which yields broadband optical modulation up to 55 per cent in the visible and near-infrared. We illustrate the promises of the method by fabricating reflective/transmissive electrochromic devices and multi-pixel display devices. Simplicity of the device architecture and its compatibility with the roll-to-roll fabrication processes, would find wide range of applications including smart windows and display devices. We anticipate that this work provides a significant step in realization of graphene based optoelectronics.
Project description:The continued miniaturization of chips demands highly thermally conductive materials and effective thermal management strategies. Particularly, the high-field transport of the devices built with 2D materials is limited by self-heating. Here a systematic control of heat flow in single-side fluorinated graphene (FG) with varying degrees of fluorination is reported, revealing a superior room-temperature thermal conductivity as high as 128 W m-1 K-1. Monolayer graphene/FG lateral heterostructures with seamless junctions are approached for device fabrication. Efficient in-plane heat removal paths from graphene channel to side FG are created, contributing significant reduction of the channel peak temperature and improvement in the current-carrying capability and power density. Molecular dynamics simulations indicate that the interfacial thermal conductance of the heterostructure is facilitated by the high degree of overlap in the phonon vibrational spectra. The findings offer novel design insights for efficient heat dissipation in micro- and nanoelectronic devices.
Project description:Since the discovery of the quantum Hall effect in 1980, it has attracted intense interest in condensed matter physics and has led to a new type of metrological standard by utilizing the resistance quantum. Graphene, a true two-dimensional electron gas material, has demonstrated the half-integer quantum Hall effect and composite-fermion fractional quantum Hall effect due to its unique massless Dirac fermions and ultra-high carrier mobility. Here, we use a monolayer graphene encapsulated with hexagonal boron nitride and few-layer graphite to fabricate micrometer-scale graphene Hall devices. The application of a graphite gate electrode significantly screens the phonon scattering from a conventional SiO2/Si substrate, and thus enhances the carrier mobility of graphene. At a low temperature, the carrier mobility of graphene devices can reach 3 × 105 cm2/V·s, and at room temperature, the carrier mobility can still exceed 1 × 105 cm2/V·s, which is very helpful for the development of high-temperature quantum Hall effects under moderate magnetic fields. At a low temperature of 1.6 K, a series of half-integer quantum Hall plateaus are well-observed in graphene with a magnetic field of 1 T. More importantly, the ν = ±2 quantum Hall plateau clearly persists up to 150 K with only a few-tesla magnetic field. These findings show that graphite-gated high-mobility graphene devices hold great potential for high-sensitivity Hall sensors and resistance metrology standards for the new Système International d'unités.